IPP65R280C6XKSA1 vs IPP65R280C6 vs IPP65R280E6

 
PartNumberIPP65R280C6XKSA1IPP65R280C6IPP65R280E6
DescriptionMOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6Trans MOSFET N-CH 650V 13.8A 3-Pin TO-220 Tube (Alt: IPP65R280C6)IGBT Transistors MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS E6
ManufacturerInfineonINFINEONINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current13.8 A--
Rds On Drain Source Resistance250 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 175 C+ 150 C
Pd Power Dissipation104 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
Height15.65 mm--
Length10 mm--
SeriesCoolMOS C6CoolMOS C6CoolMOS E6
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.4 mm--
BrandInfineon Technologies--
Fall Time12 ns12 ns-
Product TypeMOSFET--
Rise Time11 ns11 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time105 ns105 nS-
Typical Turn On Delay Time13 ns--
Part # AliasesIPP65R280C6XKSA1 SP000785058--
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Part Aliases-IPP65R280C6XK IPP65R280C6XKSA1 SP000785058IPP65R280E6XK IPP65R280E6XKSA1 SP000795268
Package Case-TO-220-3TO-220-3
Pd Power Dissipation-104 W104 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-13.8 A13.8 A
Vds Drain Source Breakdown Voltage-700 V700 V
Rds On Drain Source Resistance-280 mOhms250 mOhms
Qg Gate Charge-45 nC-
Top