IPP77N06S212AKSA2 vs IPP77N06S212AKSA1 vs IPP77N06S2-12

 
PartNumberIPP77N06S212AKSA2IPP77N06S212AKSA1IPP77N06S2-12
DescriptionMOSFET N-CHANNEL_55/60VMOSFET N-Ch 55V 77A TO220-3 OptiMOSMOSFET N-Ch 55V 77A TO220-3 OptiMOS
ManufacturerInfineonInfineonINF
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
PackagingTubeTubeTube
Height15.65 mm15.65 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPP77N06S2-12 SP001061292IPP77N06S2-12 IPP77N06S212XK SP000218172-
Unit Weight0.211644 oz0.063493 oz0.211644 oz
Vds Drain Source Breakdown Voltage-55 V-
Id Continuous Drain Current-77 A-
Rds On Drain Source Resistance-9.8 mOhms-
Vgs th Gate Source Threshold Voltage-2.1 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-60 nC-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-158 W-
Channel Mode-EnhancementEnhancement
Series-XPP77N06OptiMOS
Fall Time-26 ns26 ns
Rise Time-27 ns27 ns
Typical Turn Off Delay Time-34 ns34 ns
Typical Turn On Delay Time-14 ns14 ns
Part Aliases--IPP77N06S212AKSA1 IPP77N06S212AKSA2 SP001061292
Tradename--OptiMOS
Package Case--TO-220-3
Pd Power Dissipation--158 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--77 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--12 mOhms
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