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| PartNumber | IPS65R1K4C6AKMA1 | IPS65R1K4C6AKMA1120 | IPS65R1K4C6 |
| Description | MOSFET N-Ch 700V 3.2A IPAK-3 | Power Transistor N Channel Enhancement 700V 3.2A 3-Pin TO-251 Through Hole - Bulk (Alt: IPS65R1K4C6) | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 3.2 A | - | - |
| Rds On Drain Source Resistance | 1.26 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 28 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | Tube |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | CoolMOS C6 | - | XPS65R1 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 18.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.9 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 7.7 ns | - | - |
| Part # Aliases | IPS65R1K4C6 SP000991120 | - | - |
| Unit Weight | 0.012102 oz | - | - |
| Part Aliases | - | - | IPS65R1K4C6AKMA1 SP000991120 |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |