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| PartNumber | IRF3415SPBF | IRF3415S | IRF3415STR |
| Description | MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC | MOSFET N-CH 150V 43A D2PAK | |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 43 A | - | - |
| Rds On Drain Source Resistance | 42 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 133.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 69 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 71 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP001561532 | - | - |
| Unit Weight | 0.139332 oz | - | - |