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| PartNumber | IRF7103 | IRF7103 , HZS7.5NB2TA-E | IRF7103ITRPBF |
| Description | MOSFET Transistor, N-Channel, SO | MOSFET MOSFET, DUAL N-CHANNEL, 50V, 3.0A, SO-8, Industrial Qualified | |
| Manufacturer | IR | - | - |
| Product Category | IC Chips | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 36 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 11 ns | - | - |
| Rise Time | 9.9 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Vds Drain Source Breakdown Voltage | 400 V | - | - |
| Rds On Drain Source Resistance | 3.6 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Channel Mode | Enhancement | - | - |