IRF7328TRPBF vs IRF7328TR vs IRF7328TRPB

 
PartNumberIRF7328TRPBFIRF7328TRIRF7328TRPB
DescriptionMOSFET MOSFT DUAL PCh -30V 8AMOSFET 2P-CH 30V 8A 8-SOIC
ManufacturerInfineonInfineon TechnologiesIR
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels2 Channel-2 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance21 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge52 nC--
Pd Power Dissipation2 W--
ConfigurationDual-Dual
PackagingReelTape & Reel (TR)Tube Alternate Packaging
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel-2 P-Channel
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001565270--
Unit Weight0.019048 oz-0.019048 oz
Series-HEXFETRHEXFETR
Package Case-8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-8-SO8-SO
FET Type-2 P-Channel (Dual)2 P-Channel (Dual)
Power Max-2W2W
Drain to Source Voltage Vdss-30V30V
Input Capacitance Ciss Vds-2675pF @ 25V2675pF @ 25V
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-8A8A
Rds On Max Id Vgs-21 mOhm @ 8A, 10V21 mOhm @ 8A, 10V
Vgs th Max Id-2.5V @ 250μA2.5V @ 250μA
Gate Charge Qg Vgs-78nC @ 10V78nC @ 10V
Pd Power Dissipation--2 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--98 ns
Rise Time--15 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 8 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--21 mOhms
Typical Turn Off Delay Time--198 ns
Typical Turn On Delay Time--13 ns
Qg Gate Charge--52 nC
Channel Mode--Enhancement
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