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| PartNumber | IRF7470PBF | IRF7470 | IRF7470TR |
| Description | MOSFET N-CH 40V 10A 8-SOIC | INSTOCK | MOSFET N-CH 40V 10A 8-SOIC |
| Manufacturer | International Rectifier | IOR | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | FETs - Single | FETs - Single |
| Packaging | Tube | - | Digi-ReelR Alternate Packaging |
| Unit Weight | 0.019048 oz | - | 0.019048 oz |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | SOIC-8 | - | 8-SOIC (0.154", 3.90mm Width) |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single Quad Drain Triple Source | - | Single Quad Drain Triple Source |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 2.5 W | - | 2.5 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 3.2 ns | - | 3.2 ns |
| Rise Time | 1.9 ns | - | 1.9 ns |
| Vgs Gate Source Voltage | 12 V | - | 12 V |
| Id Continuous Drain Current | 11 A | - | 10 A |
| Vds Drain Source Breakdown Voltage | 40 V | - | 40 V |
| Vgs th Gate Source Threshold Voltage | 0.8 V to 2 V | - | 2 V |
| Rds On Drain Source Resistance | 15 mOhms | - | 13 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 21 ns | - | 21 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Qg Gate Charge | 29 nC | - | 29 nC |
| Forward Transconductance Min | 27 S | - | 27 S |
| Channel Mode | Enhancement | - | - |
| Series | - | - | HEXFETR |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 2.5W |
| Drain to Source Voltage Vdss | - | - | 40V |
| Input Capacitance Ciss Vds | - | - | 3430pF @ 20V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 10A (Ta) |
| Rds On Max Id Vgs | - | - | 13 mOhm @ 10A, 10V |
| Vgs th Max Id | - | - | 2V @ 250μA |
| Gate Charge Qg Vgs | - | - | 44nC @ 4.5V |