IRF8252PBF vs IRF8252 vs IRF8252PBF-1

 
PartNumberIRF8252PBFIRF8252IRF8252PBF-1
DescriptionMOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance3.7 mOhms--
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min89 S--
Fall Time12 ns12 ns-
Product TypeMOSFET--
Rise Time32 ns32 ns-
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time23 ns23 ns-
Part # AliasesSP001554466--
Unit Weight0.019048 oz0.019048 oz-
Package Case-SOIC-8-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-25 A-
Vds Drain Source Breakdown Voltage-25 V-
Vgs th Gate Source Threshold Voltage-1.35 V to 2.35 V-
Rds On Drain Source Resistance-3.7 mOhms-
Qg Gate Charge-35 nC-
Forward Transconductance Min-89 S-
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