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| PartNumber | IRFHM3911TRPBF | IRFHM4226TRPBF | IRFHM4231TRPBF |
| Description | MOSFET PLANAR_MOSFETS | MOSFET 25V Single N-Ch HEXFET PWR 50A | MOSFET N-CH 25V 40A PQFN |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 25 V | - |
| Id Continuous Drain Current | 3.2 A | 28 A | - |
| Rds On Drain Source Resistance | 92 mOhms | 2.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 1.6 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 17 nC | 32 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.8 W | 2.7 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.9 mm | 1.05 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Forward Transconductance Min | 20 S | 136 S | - |
| Fall Time | 5.1 ns | 8.1 ns | 5.9 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.8 ns | 35 ns | 28 ns |
| Factory Pack Quantity | 4000 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 14 ns | 12 ns |
| Typical Turn On Delay Time | 5 ns | 11 ns | 8.7 ns |
| Part # Aliases | SP001575850 | SP001556568 | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Tradename | - | FastIRFet | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Package Case | - | - | PQFN-8 |
| Pd Power Dissipation | - | - | 29 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 40 A |
| Vds Drain Source Breakdown Voltage | - | - | 25 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
| Rds On Drain Source Resistance | - | - | 3.4 mOhms |
| Qg Gate Charge | - | - | 20 nC |
| Forward Transconductance Min | - | - | 120 S |