IRFI510GPBF vs IRFI510G vs IRFI510G/ SIHFI510G

 
PartNumberIRFI510GPBFIRFI510GIRFI510G/ SIHFI510G
DescriptionMOSFET N-CH 100V HEXFET MOSFETMOSFET RECOMMENDED ALT 844-IRFI510GPBF
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance540 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation27 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
SeriesIRFIIRFI-
Transistor Type1 N-Channel--
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min1.2 S--
Fall Time9.4 ns--
Product TypeMOSFETMOSFET-
Rise Time16 ns--
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time6.9 ns--
Unit Weight0.211644 oz0.211644 oz-
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