IRFW630BTM-FP001 vs IRFW630B vs IRFW630BTM

 
PartNumberIRFW630BTM-FP001IRFW630BIRFW630BTM
DescriptionMOSFET 200V N-Ch B-FETINSTOCK- Bulk (Alt: IRFW630BTM)
ManufacturerON SemiconductorFAIFAI
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesIRFW630B--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time65 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesIRFW630BTM_FP001--
Unit Weight0.046296 oz--
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