 |  | | |
| PartNumber | IRG8P40N120KD-EPBF | IRG8P40N120KD | IRG8P40N120KDE |
| Description | IGBT Transistors 1200V IGBT GEN8 | ||
| Manufacturer | Infineon Technologies | Infineon Technologies | - |
| Product Category | IGBTs - Single | IGBTs - Single | - |
| Series | - | - | - |
| Packaging | Tube | Tube | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package Case | TO-247-3 | TO-247-3 | - |
| Input Type | Standard | Standard | - |
| Mounting Type | Through Hole | Through Hole | - |
| Supplier Device Package | TO-247AD | TO-247AD | - |
| Configuration | Single | Single | - |
| Power Max | 305W | 305W | - |
| Reverse Recovery Time trr | 80ns | 80ns | - |
| Current Collector Ic Max | 60A | 60A | - |
| Voltage Collector Emitter Breakdown Max | 1200V | 1200V | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | 75A | 75A | - |
| Vce on Max Vge Ic | 2V @ 15V, 25A | 2V @ 15V, 25A | - |
| Switching Energy | 1.6mJ (on), 1.8mJ (off) | 1.6mJ (on), 1.8mJ (off) | - |
| Gate Charge | 240nC | 240nC | - |
| Td on off 25°C | 40ns/245ns | 40ns/245ns | - |
| Test Condition | 600V, 25A, 10 Ohm, 15V | 600V, 25A, 10 Ohm, 15V | - |
| Pd Power Dissipation | 305 W | 305 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
| Continuous Collector Current at 25 C | 60 A | 60 A | - |
| Gate Emitter Leakage Current | 200 nA | 200 nA | - |
| Maximum Gate Emitter Voltage | 30 V | 30 V | - |
| Continuous Collector Current Ic Max | 40 A | 40 A | - |