IRGB4607DPBF vs IRGB4610DPBF vs IRGB4607D

 
PartNumberIRGB4607DPBFIRGB4610DPBFIRGB4607D
DescriptionIGBT Transistors 600V TRENCH IGBT ULTRAFASTIGBT Transistors 600V TRENCH IGBT ULTRAFAST
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220AB-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V2.14 V-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Continuous Collector Current at 25 C11 A16 A-
Pd Power Dissipation58 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
Continuous Collector Current Ic Max7 A10 A-
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesSP001541648--
Unit Weight0.081130 oz0.081130 oz-
Series---
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Power Max-77W-
Reverse Recovery Time trr-74ns-
Current Collector Ic Max-16A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-18A-
Vce on Max Vge Ic-2V @ 15V, 6A-
Switching Energy-56μJ (on), 122μJ (off)-
Gate Charge-13nC-
Td on off 25°C-27ns/75ns-
Test Condition-400V, 6A, 47 Ohm, 15V-
Pd Power Dissipation-77 W-
Collector Emitter Voltage VCEO Max-600 V-
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