IRGP4069-EPBF vs IRGP4069D vs IRGP4069D-E

 
PartNumberIRGP4069-EPBFIRGP4069DIRGP4069D-E
DescriptionIGBT Transistors IGBT DISCRETES
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V1.85 V1.85 V
Continuous Collector Current at 25 C76 A76 A76 A
Pd Power Dissipation268 W--
PackagingTubeTubeTube
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001545038--
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Series---
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247ADTO-247AD
Power Max-268W268W
Reverse Recovery Time trr-120ns120ns
Current Collector Ic Max-76A76A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type-TrenchTrench
Current Collector Pulsed Icm-105A105A
Vce on Max Vge Ic-1.85V @ 15V, 35A1.85V @ 15V, 35A
Switching Energy-390μJ (on), 632μJ (off)390μJ (on), 632μJ (off)
Gate Charge-104nC104nC
Td on off 25°C-46ns/105ns46ns/105ns
Test Condition-400V, 35A, 10 Ohm, 15V400V, 35A, 10 Ohm, 15V
Pd Power Dissipation-268 W268 W
Collector Emitter Voltage VCEO Max-600 V600 V
Gate Emitter Leakage Current-100 nA100 nA
Maximum Gate Emitter Voltage-20 V20 V
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