IRGR4607DTRRPBF vs IRGR4607DTRLPBF vs IRGR4607DTRPBF

 
PartNumberIRGR4607DTRRPBFIRGR4607DTRLPBFIRGR4607DTRPBF
DescriptionIGBT Transistors 600V TRENCH IGBT ULTRAFASTIGBT Transistors 600V TRENCH IGBT ULTRAFASTIGBT Transistors 600V TRENCH IGBT ULTRAFAST
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V2.2 V2.2 V
Maximum Gate Emitter Voltage20 V+/- 20 V+/- 20 V
Continuous Collector Current at 25 C11 A11 A11 A
Pd Power Dissipation58 W--
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingReelTape & Reel (TR) Alternate PackagingAlternate Packaging
Continuous Collector Current Ic Max7 A7 A7 A
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity3000--
SubcategoryIGBTs--
Part # AliasesSP001549726--
Unit Weight0.012346 oz0.012346 oz0.012346 oz
Series---
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63DPAK-3
Input Type-StandardStandard
Mounting Type-Surface Mount*
Supplier Device Package-D-Pak*
Power Max-58W58W
Reverse Recovery Time trr-48ns48ns
Current Collector Ic Max-11A11A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type--*
Current Collector Pulsed Icm-12A12A
Vce on Max Vge Ic-2.05V @ 15V, 4A2.05V @ 15V, 4A
Switching Energy-140μJ (on), 62μJ (off)140μJ (on), 62μJ (off)
Gate Charge-9nC9nC
Td on off 25°C-27ns/120ns27ns/120ns
Test Condition-400V, 4A, 100 Ohm, 15V400V, 1.5A, 100 Ohm, 15V
Pd Power Dissipation-58 W58 W
Collector Emitter Voltage VCEO Max-600 V600 V
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