IRGS4630DPBF vs IRGS4630DTRLPBF vs IRGS4630DTRRPBF

 
PartNumberIRGS4630DPBFIRGS4630DTRLPBFIRGS4630DTRRPBF
DescriptionIGBT Transistors IGBT DISCRETESIGBT Transistors 600V TRENCH IGBT ULTRAFASTIGBT Transistors 600V TRENCH IGBT ULTRAFAST
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSY--
TechnologySiSi-
Package / CaseTO-263-3TO-263-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
PackagingTubeReelTape & Reel (TR) Alternate Packaging
Height4.57 mm4.57 mm-
Length10.31 mm10.31 mm-
Width9.45 mm9.45 mm-
BrandInfineon / IRInfineon / IR-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity50800-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001534120SP001540958-
Unit Weight0.191185 oz0.009185 oz0.009185 oz
Configuration-SingleSingle
Collector Emitter Voltage VCEO Max-600 V-
Collector Emitter Saturation Voltage-2.15 V2.15 V
Maximum Gate Emitter Voltage-20 V+/- 20 V
Continuous Collector Current at 25 C-47 A47 A
Pd Power Dissipation-206 W-
Minimum Operating Temperature-- 40 C- 40 C
Maximum Operating Temperature-+ 175 C+ 175 C
Continuous Collector Current Ic Max-30 A30 A
Gate Emitter Leakage Current-100 nA100 nA
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--206W
Reverse Recovery Time trr--100ns
Current Collector Ic Max--47A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--54A
Vce on Max Vge Ic--1.95V @ 15V, 18A
Switching Energy--95μJ (on), 350μJ (off)
Gate Charge--35nC
Td on off 25°C--40ns/105ns
Test Condition--400V, 18A, 22 Ohm, 15V
Pd Power Dissipation--206 W
Collector Emitter Voltage VCEO Max--600 V
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