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| PartNumber | IRLR3717 | IRLR3717 LU3717 | IRLR3717PBF |
| Description | MOSFET N-CH 20V 120A DPAK | ||
| Manufacturer | IR | - | IR |
| Product Category | FETs - Single | - | FETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 89 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 16 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.55 V to 2.45 V |
| Rds On Drain Source Resistance | - | - | 5.7 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 5.8 ns |
| Typical Turn On Delay Time | - | - | 14 ns |
| Qg Gate Charge | - | - | 21 nC |
| Forward Transconductance Min | - | - | 49 S |
| Channel Mode | - | - | Enhancement |