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| PartNumber | IXFH20N100P | IXFH200N055T2 | IXFH20B60Q |
| Description | MOSFET 20 Amps 1000V 1 Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 570 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 126 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 660 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | - | - |
| Packaging | Tube | - | - |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH20N100 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Polar Power MOSFET HiPerFET | - | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 45 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 37 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.229281 oz | - | - |