IXFX52N100X vs IXFX520N075T2 vs IXFX52N30Q

 
PartNumberIXFX52N100XIXFX520N075T2IXFX52N30Q
DescriptionMOSFET 1000V 52A PLUS247 Power MOSFETMOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 520AMOSFET N-CH 300V 52A PLUS247-3
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePLUS247-3TO-247-3-
Number of Channels1 Channel--
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1000 V75 V-
Id Continuous Drain Current52 A520 A-
Rds On Drain Source Resistance125 mOhms2.2 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V5 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge245 nC545 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation1250 W1.25 kW-
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
SeriesX-ClassIXFX520N075-
Transistor Type1 N-Channel--
BrandIXYSIXYS-
Forward Transconductance Min23 S65 S-
Fall Time9 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns36 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time107 ns80 ns-
Typical Turn On Delay Time34 ns48 ns-
Height-21.34 mm-
Length-16.13 mm-
Type-TrenchT2 GigaMOS HiperFET Power MOSFET-
Width-5.21 mm-
Unit Weight-0.056438 oz-
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