IXGR72N60B3H1 vs IXGR72N60A3H1 vs IXGR72N60A3

 
PartNumberIXGR72N60B3H1IXGR72N60A3H1IXGR72N60A3
DescriptionIGBT Modules Mid-Frequency Range 15khz-40khz w/ DiodeIGBT Modules Low-Frequency Range Low Vcesat w/ Diode
ManufacturerIXYSIXYS-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.5 V600 V-
Continuous Collector Current at 25 C80 A75 A-
Gate Emitter Leakage Current100 nA100 nA-
Package / CaseTO-247AD-3ISOPLUS247-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTubeTube-
SeriesIXGR72N60IXGR72N60-
BrandIXYSIXYS-
Mounting StyleThrough HoleThrough Hole-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.172842 oz0.186952 oz-
Pd Power Dissipation-200 W-
Height-21.34 mm-
Length-16.13 mm-
Width-5.21 mm-
Tradename-GenX3-
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