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| PartNumber | IXTN102N65X2 | IXTN110N20L2 | IXTN120N25 |
| Description | MOSFET DISCMSFTNCHULTJNCTNX2CLASS (MI | MOSFET 100Amps 200V | MOSFET 120 Amps 250V 0.02 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | SMD/SMT |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 200 V | - |
| Id Continuous Drain Current | 76 A | 100 A | - |
| Rds On Drain Source Resistance | 30 mOhms | 24 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 4.5 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 152 nC | 500 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 595 W | 735 W | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | Linear L2 | - |
| Packaging | Tube | Tube | Tube |
| Series | X2-Class | IXTN110N20 | IXTN120N25 |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 50 S | 55 S | - |
| Fall Time | 11 ns | 135 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 28 ns | 100 ns | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 67 ns | 33 ns | - |
| Typical Turn On Delay Time | 37 ns | 40 ns | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.340411 oz |
| Height | - | 12.22 mm | - |
| Length | - | 38.23 mm | - |
| Type | - | Linear L2 Power MOSFET | - |
| Width | - | 25.42 mm | - |
| Package Case | - | - | SOT-227-4 |
| Number of Channels | - | - | 1 Channel |
| Transistor Type | - | - | 1 N-Channel |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Rds On Drain Source Resistance | - | - | 20 mOhms |