IXTQ82N25P vs IXTQ80N28 vs IXTQ80N28T

 
PartNumberIXTQ82N25PIXTQ80N28IXTQ80N28T
DescriptionMOSFET 82 Amps 250V 0.035 RdsMOSFET N-CH 280V 80A TO-3P
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleThrough Hole--
Package / CaseTO-3P-3-TO-3P-3, SC-65-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current82 A--
Rds On Drain Source Resistance35 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube-Tube
Height20.3 mm--
Length15.8 mm--
SeriesIXTQ82N25--
Transistor Type1 N-Channel--
Width4.9 mm--
BrandIXYS--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time78 ns--
Typical Turn On Delay Time29 ns--
Unit Weight0.194007 oz--
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--280V
Current Continuous Drain (Id) @ 25°C--80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs--115nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--5000pF @ 25V
FET Feature---
Power Dissipation (Max)--500W (Tc)
Rds On (Max) @ Id, Vgs--49 mOhm @ 500mA, 10V
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-3P
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