IXTT240N15X4HV vs IXTT20P50P vs IXTT20N50D

 
PartNumberIXTT240N15X4HVIXTT20P50PIXTT20N50D
DescriptionMOSFET DISCMSFT NCHULTRJNCTN X3CLASSMOSFET -20.0 Amps -500V 0.450 RdsMOSFET 20 Amps 500V 0.33 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelP-ChannelN-Channel
Vds Drain Source Breakdown Voltage150 V500 V500 V
Id Continuous Drain Current240 A20 A20 A
Rds On Drain Source Resistance4.4 mOhms450 mOhms330 mOhms
Vgs th Gate Source Threshold Voltage4.5 V2 V3.5 V
Vgs Gate Source Voltage20 V10 V30 V
Qg Gate Charge195 nC103 nC78.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation940 W460 W400 W
Channel ModeEnhancementEnhancementDepletion
TradenameHiPerFETPolarP-
SeriesX4-ClassIXTT20P50IXTT20N50
BrandIXYSIXYSIXYS
Fall Time7 ns34 ns75 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns32 ns85 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time92 ns80 ns110 ns
Typical Turn On Delay Time30 ns26 ns35 ns
Technology-SiSi
Package / Case-TO-268-3TO-268-3
Configuration-SingleSingle
Packaging-TubeTube
Height-5.1 mm5.1 mm
Length-14 mm14 mm
Transistor Type-1 P-Channel1 N-Channel
Type-PolarP Power MOSFETHigh Voltage MOSFET
Width-16.05 mm16.05 mm
Forward Transconductance Min-11 S4 S
Unit Weight-0.158733 oz0.158733 oz
Top