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| PartNumber | IXYH80N90C3 | IXYH82N120C3 | IXYH88N30P |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors XPT IGBT C3-Class 1200V/160A | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247AD-3 | TO-247AD-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Series | Planar | IXYH82N120 | - |
| Brand | IXYS | IXYS | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.225753 oz | 1.340411 oz | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 2.75 V | - |
| Maximum Gate Emitter Voltage | - | 30 V | - |
| Continuous Collector Current at 25 C | - | 160 A | - |
| Pd Power Dissipation | - | 1040 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Packaging | - | Tube | - |
| Continuous Collector Current Ic Max | - | 160 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Tradename | - | XPT | - |