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| PartNumber | J110 | J110,126 | J110 , MMG3003NT1 |
| Description | JFET JFET N-Channel -25V 50mA 360mW 3.27mW | RF JFET Transistors N-Channel Single '+/- 25V 80mA | |
| Manufacturer | InterFET | NXP Semiconductors | - |
| Product Category | JFET | JFETs (Junction Field Effect) | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Configuration | Single | - | - |
| Vds Drain Source Breakdown Voltage | 15 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 25 V | - | - |
| Drain Source Current at Vgs=0 | 10 mA | - | - |
| Id Continuous Drain Current | 1 uA | - | - |
| Rds On Drain Source Resistance | 18 Ohms | - | - |
| Pd Power Dissipation | 360 mW | - | - |
| Series | J110 | - | - |
| Packaging | Bulk | Tape & Box (TB) | - |
| Type | JFET | - | - |
| Brand | InterFET | - | - |
| Gate Source Cutoff Voltage | - 4 V | - | - |
| Factory Pack Quantity | 1 | - | - |
| Unit Weight | 0.016014 oz | - | - |
| Package Case | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-92-3 | - |
| FET Type | - | N-Channel | - |
| Power Max | - | 400mW | - |
| Voltage Breakdown V BRGSS | - | 25V | - |
| Drain to Source Voltage Vdss | - | 25V | - |
| Current Drain Idss Vds Vgs=0 | - | 10mA @ 5V | - |
| Current Drain Id Max | - | - | - |
| Voltage Cutoff VGS off Id | - | 4V @ 1μA | - |
| Input Capacitance Ciss Vds | - | 30pF @ 0V | - |
| Resistance RDS On | - | 18 Ohm | - |