Jan2N4033 vs JAN2N4029 vs Jan2N4033/TR

 
PartNumberJan2N4033JAN2N4029Jan2N4033/TR
DescriptionBipolar Transistors - BJT Small-Signal BJTBipolar Transistors - BJT PNP TransistorBipolar Transistors - BJT
ManufacturerMicrochipMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNNN
PackagingBulkFoil Bag-
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity111
SubcategoryTransistorsTransistorsTransistors
Technology--Si
Mounting Style--Through Hole
Package / Case--TO-39-3
Transistor Polarity--PNP
Configuration--Single
Collector Emitter Voltage VCEO Max--80 V
Collector Base Voltage VCBO--80 V
Emitter Base Voltage VEBO--5 V
Collector Emitter Saturation Voltage--1 V
Maximum DC Collector Current--1 A
Minimum Operating Temperature--- 65 C
Maximum Operating Temperature--+ 200 C
DC Current Gain hFE Max--300 at 100 mA, 5 V
DC Collector/Base Gain hfe Min--25 at 1 A, 5 V
Pd Power Dissipation--800 mW
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