KSA1220AOS vs KSA1220A-O vs KSA1220AOSTSTU

 
PartNumberKSA1220AOSKSA1220A-OKSA1220AOSTSTU
DescriptionBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-126-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 160 V--
Collector Base Voltage VCBO- 160 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.4 V--
Maximum DC Collector Current1.2 A--
Gain Bandwidth Product fT175 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max320--
Height11 mm--
Length8 mm--
PackagingBulk--
Width3.25 mm--
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity250--
SubcategoryTransistors--
Part # AliasesKSA1220AOS_NL--
Unit Weight0.026843 oz--
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