KSD1616AGBU vs KSD1616AGTA vs KSD1616AGBU_NL

 
PartNumberKSD1616AGBUKSD1616AGTAKSD1616AGBU_NL
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial Transistor
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3 Kinked Lead-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO120 V120 V-
Emitter Base Voltage VEBO6 V6 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT160 MHz160 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSD1616AKSD1616A-
DC Current Gain hFE Max600600-
Height4.7 mm4.7 mm-
Length4.7 mm4.7 mm-
PackagingBulkAmmo Pack-
Width3.93 mm3.93 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current1 A1 A-
DC Collector/Base Gain hfe Min135135-
Pd Power Dissipation750 mW750 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100002000-
SubcategoryTransistorsTransistors-
Part # AliasesKSD1616AGBU_NL--
Unit Weight0.006314 oz0.008466 oz-
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