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| PartNumber | MAGX-001214-250L00 | MAGX-001214-500L00 | MAGX-001214-125L00 |
| Description | RF JFET Transistors 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB | RF JFET Transistors 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB | RF JFET Transistors 1.2-1.4GHz 50Volt 125W Pk Gain 18dB |
| Manufacturer | MACOM | MACOM | MACOM |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN SiC | GaN SiC | GaN SiC |
| Gain | 17.7 dB | 19.2 dB | 18.4 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 175 V | 175 V | 175 V |
| Vgs Gate Source Breakdown Voltage | - 8 V | - 8 V | - 8 V |
| Id Continuous Drain Current | 9.1 A | 18.1 A | 4.4 A |
| Output Power | 250 W | 500 W | 125 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 95 C | + 95 C | + 95 C |
| Pd Power Dissipation | 192 W | 583 W | 115 W |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Packaging | Tray | Bulk | Tray |
| Configuration | Common Source | Common Source | Common Source |
| Operating Frequency | 1.2 GHz to 1.4 GHz | 1.2 GHz to 1.4 GHz | 1.2 GHz to 1.4 GHz |
| Operating Temperature Range | - 40 C to + 95 C | - 40 C to + 95 C | - 40 C to + 95 C |
| Product | RF JFET | RF JFET | RF JFET |
| Type | GaN SiC HEMT | GaN SiC HEMT | GaN SiC HEMT |
| Brand | MACOM | MACOM | MACOM |
| Forward Transconductance Min | 5 S | 12.5 S | 2.5 S |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | Transistors | Transistors | Transistors |
| Vgs th Gate Source Threshold Voltage | - 3.1 V | - 3.1 V | - 3.8 V |