MBT3906DW1T1G vs MBT3906DW1T1 vs MBT3906DW1T1(A2)

 
PartNumberMBT3906DW1T1GMBT3906DW1T1MBT3906DW1T1(A2)
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 40VBipolar Transistors - BJT 200mA 40V Dual PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SC-70-6-
Transistor PolarityPNPPNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 40 V- 40 V-
Collector Base Voltage VCBO- 40 V- 40 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage- 0.4 V- 0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMBT3906DW1--
Height1 mm0.9 mm-
Length2.2 mm2 mm-
PackagingReelReel-
Width1.35 mm1.25 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 200 mAdc- 0.2 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesMBT3906DW1T2G--
Unit Weight0.000212 oz0.000988 oz-
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