MJD32CT4-A vs MJD32CT4G vs MJD32CT4


PartNumber	MJD32CT4-A	MJD32CT4G	MJD32CT4
Description	Bipolar Transistors - BJT LO PWR PNP PW TRANS	Bipolar Transistors - BJT 3A 100V 15W PNP	Bipolar Transistors - BJT PNP Gen Pur Switch
Manufacturer	STMicroelectronics	ON Semiconductor	STMicroelectronics
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3	TO-252-3
Transistor Polarity	PNP	PNP	PNP
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	100 V	100 V	100 V
Collector Base Voltage VCBO	100 V	100 V	100 V
Emitter Base Voltage VEBO	5 V	5 V	5 V
Maximum DC Collector Current	3 A	3 A	3 A
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	MJD32CT4-A	MJD32C	MJD32C
Height	2.4 mm (Max)	2.38 mm	2.4 mm
Length	6.6 mm (Max)	6.73 mm	6.6 mm
Packaging	Reel	Reel	Reel
Width	6.2 mm (Max)	6.22 mm	6.2 mm
Brand	STMicroelectronics	ON Semiconductor / Fairchild	STMicroelectronics
Pd Power Dissipation	15000 mW	1.56 W	15 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Qualification	AEC-Q101	-	-
Factory Pack Quantity	2500	2500	2500
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.063493 oz	0.035274 oz	0.063493 oz
Collector Emitter Saturation Voltage	-	1.2 V	- 1.2 V
Gain Bandwidth Product fT	-	3 MHz	-
Continuous Collector Current	-	3 A	3 A
DC Collector/Base Gain hfe Min	-	25	20