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MMBT2369 vs MMBT2369 , MAX1963TT110 vs MMBT2369A

 
PartNumberMMBT2369MMBT2369 , MAX1963TT110MMBT2369A
DescriptionBipolar Transistors - BJT NPN HIGH SPD SWTRANS NPN 15V 0.2A SOT-23
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max15 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO4.5 V--
Collector Emitter Saturation Voltage0.25 V-0.5 V
Maximum DC Collector Current0.2 A-0.2 A
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMMBT2369--
DC Current Gain hFE Max120-120
Height0.93 mm--
Length2.92 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.2 A-0.2 A
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesMMBT2369_NL--
Unit Weight0.000282 oz-0.002116 oz
Part Aliases--MMBT2369A_NL
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3
Power Max--225mW
Transistor Type--NPN
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--15V
DC Current Gain hFE Min Ic Vce--40 @ 10mA, 1V
Vce Saturation Max Ib Ic--500mV @ 10mA, 100mA
Current Collector Cutoff Max--400nA (ICBO)
Frequency Transition---
Pd Power Dissipation--225 mW
Collector Emitter Voltage VCEO Max--15 V
Collector Base Voltage VCBO--40 V
Emitter Base Voltage VEBO--4.5 V
DC Collector Base Gain hfe Min--40
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