MMBT2907AWT1G vs MMBT2907AWT1 vs MMBT2907AWT1F-ON

 
PartNumberMMBT2907AWT1GMMBT2907AWT1MMBT2907AWT1F-ON
DescriptionBipolar Transistors - BJT 600mA 60V PNPBipolar Transistors - BJT 600mA 60V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-70-3SC-70-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 60 V- 60 V-
Collector Base Voltage VCBO4 V- 60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage- 1.6 V- 1.6 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT2907AW--
Height0.85 mm0.85 mm-
Length2.1 mm2.1 mm-
PackagingReelReel-
Width1.24 mm1.24 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.6 A- 0.6 A-
DC Collector/Base Gain hfe Min7575-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz0.000219 oz-
Top