MMBTA56LT1G vs MMBTA 56 LT1 vs MMBTA56LT1G 2GM

 
PartNumberMMBTA56LT1GMMBTA 56 LT1MMBTA56LT1G 2GM
DescriptionBipolar Transistors - BJT 500mA 80V PNPBipolar Transistors - BJT AF GP BJT PNP 80V 0.5A
ManufacturerON SemiconductorInfineon-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 80 V80 V-
Collector Base Voltage VCBO- 80 V80 V-
Emitter Base Voltage VEBO4 V4 V-
Collector Emitter Saturation Voltage- 0.25 V--
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT50 MHz100 MHz-
Minimum Operating Temperature- 55 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBTA56LMMBTA-
Height0.94 mm1(Max) mm-
Length2.9 mm2.9 mm-
PackagingReelReel-
Width1.3 mm1.3 mm-
BrandON SemiconductorInfineon Technologies-
Continuous Collector Current- 0.5 A--
Pd Power Dissipation225 mW330 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.049384 oz0.000282 oz-
Part # Aliases-MMBTA56LT1HTSA1 MMBTA56LT1XT SP000011691-
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