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| PartNumber | MRF6V10010NR4 | MRF6V10010N | MRF6V10250HSR3 |
| Description | RF MOSFET Transistors VHV6 10W PULSE PLD1.5 | FET RF 100V 1.09GHZ NI780S | |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | E | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Gain | 25 dB | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PLD-1.5 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single Dual Source | - | - |
| Height | 1.83 mm | - | - |
| Length | 6.73 mm | - | - |
| Operating Frequency | 960 MHz to 1400 MHz | - | - |
| Series | MRF6V10010N | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 5.97 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 6 V, 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Part # Aliases | 935321297531 | - | - |
| Unit Weight | 0.009877 oz | - | - |