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| PartNumber | MRFX1K80GNR5 | MRFX1K80H-128MHZ | MRFX1K80H |
| Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | RF Development Tools 3500W pulse - 2 up - 128MHz | PHSMRFX1K80H (Alt: MRFX1K80H) |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF Development Tools | - |
| RoHS | Y | Y | - |
| Transistor Polarity | Dual N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 43 A | - | - |
| Vds Drain Source Breakdown Voltage | - 500 mV, 179 V | - | - |
| Gain | 24.4 dB | - | - |
| Output Power | 1.8 kW | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | OM-1230G-4L | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 1.8 MHz to 400 MHz | - | - |
| Series | MRFX1K80 | MRFX1K80 | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Brand | NXP Semiconductors | NXP Semiconductors | - |
| Forward Transconductance Min | 44.7 S | - | - |
| Number of Channels | 2 Channel | - | - |
| Moisture Sensitive | Yes | - | - |
| Pd Power Dissipation | 3333 W | - | - |
| Product Type | RF MOSFET Transistors | RF Development Tools | - |
| Factory Pack Quantity | 50 | 1 | - |
| Subcategory | MOSFETs | Development Tools | - |
| Vgs Gate Source Voltage | - 6 V, 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Part # Aliases | 935362677578 | 935362181598 | - |