NDD60N745U1-1G vs NDD60N745U1-35G vs NDD60N745U1

 
PartNumberNDD60N745U1-1GNDD60N745U1-35GNDD60N745U1
DescriptionMOSFET NFET DPAK 600V 6.8AMOSFET Power MOSFET 600V 6.8A 745 m_ Single
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
PackagingTubeTube-
BrandON SemiconductorON Semiconductor-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity7575-
SubcategoryMOSFETsMOSFETs-
Mounting Style-Through Hole-
Package / Case-IPAK-3-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-600 V-
Id Continuous Drain Current-6.6 A-
Rds On Drain Source Resistance-610 mOhms-
Vgs th Gate Source Threshold Voltage-2 V-
Vgs Gate Source Voltage-25 V-
Qg Gate Charge-15 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-84 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Forward Transconductance Min-5.6 S-
Fall Time-7 ns-
Rise Time-10 ns-
Typical Turn Off Delay Time-19 ns-
Typical Turn On Delay Time-8 ns-
Unit Weight-0.139332 oz-
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