NGTB15N60R2FG vs NGTB15N60EG vs NGTB15N60S

 
PartNumberNGTB15N60R2FGNGTB15N60EGNGTB15N60S
DescriptionIGBT Transistors RC2 IGBT 15A 600VIGBT Transistors 15A 600V IGBT
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-220-3TO-220-3-
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.85 V1.95 V1.7 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C24 A30 A30 A
Pd Power Dissipation54 W47 W-
Maximum Operating Temperature+ 175 C--
PackagingTubeTubeTube
Continuous Collector Current Ic Max14 A--
BrandON SemiconductorON Semiconductor-
Gate Emitter Leakage Current+/- 100 nA100 nA100 nA
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity5050-
SubcategoryIGBTsIGBTs-
Unit Weight0.211644 oz0.081130 oz0.081130 oz
Series-NGTB15N60EGNGTB15N60S1
Package Case--TO-220-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220
Power Max--117W
Reverse Recovery Time trr--270ns
Current Collector Ic Max--30A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--NPT
Current Collector Pulsed Icm--120A
Vce on Max Vge Ic--1.7V @ 15V, 15A
Switching Energy--550μJ (on), 350μJ (off)
Gate Charge--88nC
Td on off 25°C--65ns/170ns
Test Condition--400V, 15A, 22 Ohm, 15V
Pd Power Dissipation--47 W
Collector Emitter Voltage VCEO Max--600 V
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