NGTB20N120IHLWG vs NGTB20N120IH vs NGTB20N120IHL

 
PartNumberNGTB20N120IHLWGNGTB20N120IHNGTB20N120IHL
DescriptionIGBT Transistors 1200V/20A IGBT FSI TO-2
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough Hole-Through Hole
Collector Emitter Voltage VCEO Max1200 V--
Maximum Gate Emitter Voltage20 V-20 V
Continuous Collector Current at 25 C40 A-40 A
Pd Power Dissipation250 W--
SeriesNGTB20N120IHL-NGTB20N120IHL
PackagingTube-Tube
BrandON Semiconductor--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247
Power Max--192W
Reverse Recovery Time trr---
Current Collector Ic Max--40A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type---
Current Collector Pulsed Icm--200A
Vce on Max Vge Ic--2.2V @ 15V, 20A
Switching Energy--700μJ (off)
Gate Charge--200nC
Td on off 25°C---/235ns
Test Condition--600V, 20A, 10 Ohm, 15V
Pd Power Dissipation--250 W
Collector Emitter Voltage VCEO Max--1200 V
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