NGTB25N120FL2WAG vs NGTB25N120 vs NGTB25N120FL

 
PartNumberNGTB25N120FL2WAGNGTB25N120NGTB25N120FL
DescriptionIGBT Transistors 1200V/25 FAST IGBT FSII T
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
PackagingTube-Tube
BrandON Semiconductor--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Series---
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247-3
Power Max--385W
Reverse Recovery Time trr--154ns
Current Collector Ic Max--50A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--Field Stop
Current Collector Pulsed Icm--100A
Vce on Max Vge Ic--2.4V @ 15V, 25A
Switching Energy--1.95mJ (on), 600μJ (off)
Gate Charge--178nC
Td on off 25°C--87ns/179ns
Test Condition--600V, 25A, 10 Ohm, 15V
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