NP180N04TUG-E1-AY vs NP180N04TUG vs NP180N04TUJ

 
PartNumberNP180N04TUG-E1-AYNP180N04TUGNP180N04TUJ
DescriptionMOSFET POWER MOSFET
ManufacturerRenesas ElectronicsNEC-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance1.2 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge260 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation288 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandRenesas Electronics--
Forward Transconductance Min107 S--
Fall Time21 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time43 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time104 ns--
Typical Turn On Delay Time54 ns--
Unit Weight0.077603 oz--
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