NSBC123JPDP6T5G vs NSBC123JPDXV6T1G vs NSBC123JPDXV6T1

 
PartNumberNSBC123JPDP6T5GNSBC123JPDXV6T1GNSBC123JPDXV6T1
DescriptionBipolar Transistors - Pre-Biased BRT COMPLEMENTARYBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNPBipolar Transistors - Pre-Biased 100mA Complementary
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
SeriesNSBC123JPDP6DTC123JP-
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity80004000-
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000042 oz0.000106 oz0.000106 oz
Configuration-DualDual
Transistor Polarity-PNPPNP
Typical Input Resistor-2.2 kOhms2.2 kOhms
Typical Resistor Ratio-0.0470.047
Mounting Style-SMD/SMTSMD/SMT
Package / Case-SOT-563-6SOT-563-6
DC Collector/Base Gain hfe Min-8080
Collector Emitter Voltage VCEO Max-50 V50 V
Continuous Collector Current-0.1 A0.1 A
Peak DC Collector Current-100 mA100 mA
Pd Power Dissipation-357 mW357 mW
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
DC Current Gain hFE Max-8080
Height-0.55 mm0.55 mm
Length-1.6 mm1.6 mm
Width-1.2 mm1.2 mm
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