NSM4002MR6T1G vs NSM4101H285H3R vs NSM404000600-

 
PartNumberNSM4002MR6T1GNSM4101H285H3RNSM404000600-
DescriptionBipolar Transistors - BJT DUAL NPN TRANSISTORS
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-74-6--
Transistor PolarityNPN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V, 45 V--
Collector Base Voltage VCBO60 V, 50 V--
Emitter Base Voltage VEBO6 V, 5 V--
Collector Emitter Saturation Voltage300 mV, 700 mV--
Maximum DC Collector Current200 mA, 500 mA--
Gain Bandwidth Product fT300 MHz, 100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max300, 600--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current200 mA, 500 mA--
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V, 40 at 500 mA, 1 V--
Pd Power Dissipation500 uW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
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