NST30010MXV6T1G vs NST3365MK-LF-170 vs NST30010MXV6T1G-CUT TAPE

 
PartNumberNST30010MXV6T1GNST3365MK-LF-170NST30010MXV6T1G-CUT TAPE
DescriptionBipolar Transistors - BJT DUAL MATCHED GP XTT PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNST30010MXV6--
Height0.55 mm--
Length1.6 mm--
PackagingReel--
Width1.2 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A--
DC Collector/Base Gain hfe Min270 at 10 uA, 5 V, 420 at 2 mA, 5 V--
Pd Power Dissipation661 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Top