NTD4809NH-1G vs NTD4809NH vs NTD4809NH-35G

 
PartNumberNTD4809NH-1GNTD4809NHNTD4809NH-35G
DescriptionMOSFET NFET DPAK 30V 58A 9MOHMMOSFET N-CH 30V 9A IPAK
ManufacturerON SemiconductorONON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current11.5 A--
Rds On Drain Source Resistance9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height6.35 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width2.38 mm--
BrandON Semiconductor--
Fall Time5 ns, 3 ns--
Product TypeMOSFET--
Rise Time20 ns, 18 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns, 22 ns--
Typical Turn On Delay Time12 ns, 7 ns--
Unit Weight0.139332 oz--
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