NTD4810N-1G vs NTD4810N vs NTD4810N-35G

 
PartNumberNTD4810N-1GNTD4810NNTD4810N-35G
DescriptionMOSFET NFET 30V 54A 10MOHMMOSFET N-CH 30V 8.6A IPAK
ManufacturerON SemiconductorONON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current10.8 A--
Rds On Drain Source Resistance10 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height6.35 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width2.38 mm--
BrandON Semiconductor--
Fall Time3.8 ns, 2.6 ns--
Product TypeMOSFET--
Rise Time20.7 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.8 ns, 21.8 ns--
Typical Turn On Delay Time11.5 ns, 7.2 ns--
Unit Weight0.139332 oz--
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