NTD4856N-1G vs NTD4856N vs NTD4856N 4856NG ON

 
PartNumberNTD4856N-1GNTD4856NNTD4856N 4856NG ON
DescriptionMOSFET NFET 25V 89A 0.0047R DPAK
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current16.8 A--
Rds On Drain Source Resistance5.3 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2.14 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height6.35 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypePower Trench MOSFET--
Width2.38 mm--
BrandON Semiconductor--
Forward Transconductance Min73 S--
Fall Time7.5 ns--
Product TypeMOSFET--
Rise Time22.5 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27.2 ns--
Typical Turn On Delay Time15.7 ns--
Unit Weight0.139332 oz--
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