NTD4909N-1G vs NTD4909N-35G vs NTD4909N

 
PartNumberNTD4909N-1GNTD4909N-35GNTD4909N
DescriptionMOSFET NFET DPAK 30V 41A 8.0 mOhmMOSFET NFET DPAK 30V 41A 8.0 mOhm
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current41 A12.1 A-
Rds On Drain Source Resistance12 mOhms8 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation2.6 W2.6 W-
ConfigurationSingleSingle-
Transistor Type1 N-Channel1 N-Channel-
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity7575-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz-
Qg Gate Charge-17.5 nC-
Series-NTD4909N-
Fall Time-2.3 ns-
Rise Time-19 ns-
Typical Turn Off Delay Time-21 ns-
Typical Turn On Delay Time-8 ns-
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