NTD6416AN-1G vs NTD6416AN vs NTD6416ANG

 
PartNumberNTD6416AN-1GNTD6416ANNTD6416ANG
DescriptionMOSFET NFET IPAK 100V 15A 86MOHM
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance73 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation71 W--
ConfigurationSingleSingle-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min12 S--
Fall Time20 ns20 ns-
Product TypeMOSFET--
Rise Time22 ns22 ns-
Factory Pack Quantity75--
SubcategoryMOSFETs--
Unit Weight0.139332 oz0.139332 oz-
Packaging-Tube-
Package Case-IPAK-3-
Pd Power Dissipation-71 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-17 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-73 mOhms-
Qg Gate Charge-20 nC-
Forward Transconductance Min-12 S-
Top