NTGS4111PT1G vs NTGS4111PT1 vs NTGS4111PT1G , FLZ20VA

 
PartNumberNTGS4111PT1GNTGS4111PT1NTGS4111PT1G , FLZ20VA
DescriptionMOSFET -30V -4.7A P-ChannelMOSFET P-CH 30V 2.6A 6-TSOP
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseTSOP-6SOT-23-6-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.7 A--
Rds On Drain Source Resistance68 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height0.94 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesNTGS4111P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.5 mm--
BrandON Semiconductor--
Forward Transconductance Min6 S--
Fall Time15 ns, 9 ns--
Product TypeMOSFET--
Rise Time15 ns, 9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns, 38 ns--
Typical Turn On Delay Time11 ns, 9 ns--
Unit Weight0.000705 oz--
Part Status-Obsolete-
FET Type-P-Channel-
Drain to Source Voltage (Vdss)-30V-
Current Continuous Drain (Id) @ 25°C-2.6A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-4.5V, 10V-
Vgs(th) (Max) @ Id-3V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-32nC @ 10V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-750pF @ 15V-
FET Feature---
Power Dissipation (Max)-630mW (Ta)-
Rds On (Max) @ Id, Vgs-60 mOhm @ 3.7A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-TSOP-
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